Chemical Vapor deposition (CVD) TiN: a barrier metallization for submicron via and contact applications

Karl A. Littau; Rod Mosely; M. Eizenberg; Hung V. Tran; Ashok K. Sinha; Girish A. Dixit; Manoj K. Jain; Michael F. Chisholm; Robert H. Havemann

doi:10.1117/12.186070

9 September 1994 Chemical Vapor deposition (CVD) TiN: a barrier metallization for submicron via and contact applications

Karl A. Littau, Rod Mosely, M. Eizenberg, Hung V. Tran, Ashok K. Sinha, Girish A. Dixit, Manoj K. Jain, Michael F. Chisholm, Robert H. Havemann

Author Affiliations +

Proceedings Volume 2335, Microelectronics Technology and Process Integration; (1994) https://doi.org/10.1117/12.186070
Event: Microelectronic Manufacturing, 1994, Austin, TX, United States

Abstract

A new technique for low temperature CVD TiN is introduced as a barrier/glue layer for sub 0.5 micron applications. Excellent conformity (> 70%) is achieved while maintaining good electrical performance and reliability. The films are shown to be polycrystalline TiN with no preferred grain orientation. In addition compositional analysis shows significant amounts of carbon in the film presumably between the grains. The electrical properties of the CVD film were evaluated at the via and contact level. The contact and via resistances of tungsten plugs using CVD TiN glue layers are shown to be comparable to plugs using sputtered TiN. The barrier performance of the film was also evaluated at the contact level. The superior junction leakage data indicate that the CVD TiN film should have wide application as a barrier metal for sub 0.5 mm applications.

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Karl A. Littau, Rod Mosely, M. Eizenberg, Hung V. Tran, Ashok K. Sinha, Girish A. Dixit, Manoj K. Jain, Michael F. Chisholm, and Robert H. Havemann "Chemical Vapor deposition (CVD) TiN: a barrier metallization for submicron via and contact applications", Proc. SPIE 2335, Microelectronics Technology and Process Integration, (9 September 1994); https://doi.org/10.1117/12.186070

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