High-quality sub-5-nm oxynitride dielectric films grown on silicon in a nitric oxide ambient using rapid thermal processing

Ze-Qiang Yao; H. Barry Harrison; Sima Dimitrijev; Y. T. Yeow

doi:10.1117/12.186065

9 September 1994 High-quality sub-5-nm oxynitride dielectric films grown on silicon in a nitric oxide ambient using rapid thermal processing

Ze-Qiang Yao, H. Barry Harrison, Sima Dimitrijev, Y. T. Yeow

Author Affiliations +

Proceedings Volume 2335, Microelectronics Technology and Process Integration; (1994) https://doi.org/10.1117/12.186065
Event: Microelectronic Manufacturing, 1994, Austin, TX, United States

Abstract

Ultrathin (< 5 nm) dielectric films have been grown on (100) silicon using rapid thermal processing (RTP) in a nitric oxide (NO) ambient. The chemical composition was studied using x-ray photoelectron spectroscopy (XPS). Interface state density, charge trapping properties, and interface state generation during Fowler-Nordheim electron injection have also been investigated. The films grown in NO have excellent electrical properties. These properties are explained in terms of much stronger and large numbers of Si-N bonds in both the bulk of the dielectric films an in Si-SiO₂ interface region.

Citation Download Citation

Ze-Qiang Yao, H. Barry Harrison, Sima Dimitrijev, and Y. T. Yeow "High-quality sub-5-nm oxynitride dielectric films grown on silicon in a nitric oxide ambient using rapid thermal processing", Proc. SPIE 2335, Microelectronics Technology and Process Integration, (9 September 1994); https://doi.org/10.1117/12.186065

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