Thin-gate dielectric films grown in N2O and O2 using rapid thermal oxidation

John M. Grant; Tzu Yen Hsieh; Victoria L. Shannon

doi:10.1117/12.186063

9 September 1994 Thin-gate dielectric films grown in N2O and O2 using rapid thermal oxidation

John M. Grant, Tzu Yen Hsieh, Victoria L. Shannon

Proceedings Volume 2335, Microelectronics Technology and Process Integration; (1994) https://doi.org/10.1117/12.186063
Event: Microelectronic Manufacturing, 1994, Austin, TX, United States

Abstract

Much work has been performed in the past few years on N₂O oxidation as a method to produce nitrided gate dielectrics. Most of this work has centered on processes in horizontal or vertical batch furnaces operating at atmospheric pressure. Obtaining good oxide thickness uniformity, both within the wafer and across the batch, has proven to be more difficult for N₂O oxidation than for O₂ oxidation. As the gate dielectric thickness requirement approaches 50 angstrom or less, uniformity of the dielectric thickness becomes more critical. For thinner oxides, single wafer rapid thermal oxidation (RTO) may be the only feasible oxidation technique. N₂O oxidation development in an integrated gate stack cluster tool has been underway for more than one year. This oxidation has been performed under a variety of process conditions on both conventional silicon and SOI wafers. Recent results indicate that oxides grown in N₂O at lower pressures (approximately 100 Torr) have better electrical characteristics and thickness uniformity than oxides grown in N₂O at atmospheric pressure. Reliability test indicate that oxides grown in N₂O have consistently better breakdown field, charge to breakdown, and time dependent dielectric breakdown than oxides grown in O₂ under identical conditions; however, unstressed N₂O oxides have higher interface trap densities than similar O₂ oxides.

Citation Download Citation

John M. Grant, Tzu Yen Hsieh, and Victoria L. Shannon "Thin-gate dielectric films grown in N2O and O2 using rapid thermal oxidation", Proc. SPIE 2335, Microelectronics Technology and Process Integration, (9 September 1994); https://doi.org/10.1117/12.186063

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