Issues of epitaxial growth and transport for room temperature cw blue/green laser diodes

Mike D. Ringle; Donald C. Grillo; Yongping Fan; Guo-Chun Hua; Jung Han; Robert L. Gunshor

doi:10.1117/12.197264

21 December 1994 Issues of epitaxial growth and transport for room temperature cw blue/green laser diodes

Mike D. Ringle, Donald C. Grillo, Yongping Fan, Guo-Chun Hua, Jung Han, Robert L. Gunshor

Proceedings Volume 2346, II-VI Blue/Green Laser Diodes; (1994) https://doi.org/10.1117/12.197264
Event: Photonics for Industrial Applications, 1994, Boston, MA, United States

Abstract

The growth of ZnMgSSe is a key component of long-lived II-VI laser diodes, however there are structural and electrical problems associated the compound that must be resolved. Precise lattice matching requires accurate growth temperature control due to the dependance of the sulfur sticking coefficient on the growth temperature. Electrically, p-type doping of ZnMgSSe is complicated by an apparent increase in the activation energy caused by a mechanism very much like that of the DX center in n-type III-V alloys. These factors must be addressed for II-VI light emitting devices in deep blue part of the spectrum.

Citation Download Citation

Mike D. Ringle, Donald C. Grillo, Yongping Fan, Guo-Chun Hua, Jung Han, and Robert L. Gunshor "Issues of epitaxial growth and transport for room temperature cw blue/green laser diodes", Proc. SPIE 2346, II-VI Blue/Green Laser Diodes, (21 December 1994); https://doi.org/10.1117/12.197264

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