Study for the design of high-resolution novolak-DNQ photoresist: the effects of low-molecular-weight phenolic compounds on resist systems

Hidetoshi Miyamoto; Toshio Nakamura; Katsumi Inomata; Toshiyuki Ota; Akira Tsuji

doi:10.1117/12.210344

9 June 1995 Study for the design of high-resolution novolak-DNQ photoresist: the effects of low-molecular-weight phenolic compounds on resist systems

Hidetoshi Miyamoto, Toshio Nakamura, Katsumi Inomata, Toshiyuki Ota, Akira Tsuji

Author Affiliations +

Proceedings Volume 2438, Advances in Resist Technology and Processing XII; (1995) https://doi.org/10.1117/12.210344
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

Design criteria for the development of the high resolution photoresists comprising novolak resin and DNQ-PAC are proposed by studying the dissolution behavior of photoresists across film thickness. We propose a new analytical method for the dissolution behavior, with which the dissolution rate curves at surface, middle, and bottom parts in a photoresist film can be analyzed separately. From the experimental results obtained by using this new analytical method, we established the following design criteria: (1) To obtain a large separation DOF, the photoresist has to show a steep slope and a large contrast of dissolution curve at the bottom part in some practical exposure dose range of clear region. (2) A small difference of dissolution rate between the surface part and bottom part is necessary to obtain a large profile DOF. In order to adjust a dissolution behavior taking account of the new criteria, we examined the effects of photoresist components. It was found that some phenolic additives were very useful to control the dissolution behavior. The results of the spectroscopic study suggest that such a strong effect is caused by the interaction between phenolic additive and PAC or developer. A photoresist developed by adopting these design criteria for the dissolution behavior control shows wide DOF at 0.35 micrometers L&S with good pattern profile.

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Hidetoshi Miyamoto, Toshio Nakamura, Katsumi Inomata, Toshiyuki Ota, and Akira Tsuji "Study for the design of high-resolution novolak-DNQ photoresist: the effects of low-molecular-weight phenolic compounds on resist systems", Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); https://doi.org/10.1117/12.210344

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