Paper
22 May 1995 Near and sub-half-micrometer geometry SEM metrology requirements for good process control
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Abstract
Over the past ten years lpw kV Electron Microscopy has been the technique of choice for inprocess, critical layer metrology, for leading-edge design-rule devices. However, conventional low kY Secondary Electron microscopy is reaching its limits in its ability to measure near and sub-half micron features at all levels due to charging issues and interpretation of resist profile. A re-evaluation of the strategy for determining CD measurement site becomes increasingly important as site to site differences are more significant at these smaller dimensions. Otherwise an apparently well controlled process measured in a typical site (e.g. array of a memoiy cell) could be failing due to shorts in critical sites. These critical sites tend to challenge the limits of conventional SEM metrology more. A new generation of SEMs offering a variety of techniques to overcome these limitations has recently arrived on the market, these improve visibility and reduce the effects of charging, allowing a more accurate and representative control ofa lithographic process to be made.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christopher M. Cork, Paolo Canestrari, Paolo De Natale, and Mauro Vasconi "Near and sub-half-micrometer geometry SEM metrology requirements for good process control", Proc. SPIE 2439, Integrated Circuit Metrology, Inspection, and Process Control IX, (22 May 1995); https://doi.org/10.1117/12.209238
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KEYWORDS
Process control

Metrology

Scanning electron microscopy

Etching

Cadmium

Visibility

Lithography

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