Antireflection coating process characterization and improvement for DUV lithography at 0.25 um: ground rules

John L. Sturtevant; M. Chaara; R. Elliot; Larry David Hollifield Jr.; Robert A. Soper; David R. Stark; Nathan S. Thane; John S. Petersen

doi:10.1117/12.209288

26 May 1995 Antireflection coating process characterization and improvement for DUV lithography at 0.25 um: ground rules

John L. Sturtevant, M. Chaara, R. Elliot, Larry David Hollifield Jr., Robert A. Soper, David R. Stark, Nathan S. Thane, John S. Petersen

Author Affiliations +

Proceedings Volume 2440, Optical/Laser Microlithography VIII; (1995) https://doi.org/10.1117/12.209288
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

The use of organic antireflection layers (ARL) for KrF laser-based DUV lithography at 0.25 micrometers groundrules has been studied. Critical performance considerations include swing curve suppression, coating conformity over topography, defectivity, and etch process control. The use of currently available ARL materials over a range of thickness values reported, and it is shown that substantial swing effects still exist at 0.25 micrometers dimensions, in agreement with theoretical prediction. ARL/resist interfacial defect are seen to be minimized with a new ARL formulation. Atomic Force Microscopy (AFM) data is presented which indicate significant ARL and resist thickness variations over product topography. Preliminary results on an improved ARL etch process and a removable ARL process based upon a uv-harden treatment are also reported. Significant improvements in materials and processes are required for a 0.25 micrometers manufacturing capable system.

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John L. Sturtevant, M. Chaara, R. Elliot, Larry David Hollifield Jr., Robert A. Soper, David R. Stark, Nathan S. Thane, and John S. Petersen "Antireflection coating process characterization and improvement for DUV lithography at 0.25 um: ground rules", Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); https://doi.org/10.1117/12.209288

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