Paper
26 May 1995 Characterization of 5X stepper lenses to improve depth of focus
David P. Paul, Maurice A. Hamel, Ken A. Lavallee
Author Affiliations +
Abstract
In the fabrication of integrated circuits, device pattern size determines electrical performance characteristics. Variations in the size of lines, trenches, contacts, straps, etc. result in electrical device performance differences. When the variations occur from chip to chip or wafer to wafer, we find that entire chips function differently (e.g. impacts clock speeds). This paper discusses within-chip variations that can produce undesirable effects which, when severe enough, can kill an entire chip because portions of it have incompatible electrical performance. The modeling and characterization of image-size variations caused by lens aberrations of 5X photolithography steppers with lens field sizes from 15 mm2 to 22 mm2 are also discussed.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David P. Paul, Maurice A. Hamel, and Ken A. Lavallee "Characterization of 5X stepper lenses to improve depth of focus", Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); https://doi.org/10.1117/12.209293
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Monochromatic aberrations

Lenses

Semiconducting wafers

Tolerancing

Composites

Data modeling

Optical lithography

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