Process capabilities of critical dimensions at gate mask

Zoran Krivokapic; William D. Heavlin; David F. Kyser

doi:10.1117/12.209320

26 May 1995 Process capabilities of critical dimensions at gate mask

Zoran Krivokapic, William D. Heavlin, David F. Kyser

Proceedings Volume 2440, Optical/Laser Microlithography VIII; (1995) https://doi.org/10.1117/12.209320
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

We present a methodology for predicting photoresist linewidth distributions, and for quantifying the contributions of the key sources of variation. We apply it to evaluate the manufacturability of photolithographic processes under development. The methodology has the advantage of predicting distributions across the entire reticle field. When technology requirements are too stringent, this approach quantifies which elements of the process need to be more tightly controlled. We apply these methods to a 0.5 micron technology and to two 0.35 micron technologies; the latter requires a novel calibration strategy. For production i-line lithography of 0.35 micron features, our results predict that improved exposure dose control is needed.

Citation Download Citation

Zoran Krivokapic, William D. Heavlin, and David F. Kyser "Process capabilities of critical dimensions at gate mask", Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); https://doi.org/10.1117/12.209320

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