Monolithic integration of strained-layer InGaAs/GaAs/AlGaAs lasers with photodiodes by selective-area MOCVD

Robert M. Lammert; Pablo V. Mena; David V. Forbes; Mark L. Osowski; Steve M. Kang; James J. Coleman

doi:10.1117/12.228874

27 December 1995 Monolithic integration of strained-layer InGaAs/GaAs/AlGaAs lasers with photodiodes by selective-area MOCVD

Robert M. Lammert, Pablo V. Mena, David V. Forbes, Mark L. Osowski, Steve M. Kang, James J. Coleman

Author Affiliations +

Proceedings Volume 2613, Emerging Components and Technologies for All-Optical Networks; (1995) https://doi.org/10.1117/12.228874
Event: Photonics East '95, 1995, Philadelphia, PA, United States

Abstract

Characteristics of strained-layer InGaAs/GaAs/AlGaAs lasers with monolithically integrated photodiodes fabricated by selective-area epitaxy are presented. Threshold currents as low as 8 mA (approximately 300 A/cm²) were obtained for uncoated devices operating cw at room temperature. Responsivities of 71, 41, and 6.7 (mu) A/mW was obtained for devices with photodiode etched facet angles of 3 degree(s), 14 degree(s), and 45 degree(s), respectively, and a photodiode bias of 0 V.

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Robert M. Lammert, Pablo V. Mena, David V. Forbes, Mark L. Osowski, Steve M. Kang, and James J. Coleman "Monolithic integration of strained-layer InGaAs/GaAs/AlGaAs lasers with photodiodes by selective-area MOCVD", Proc. SPIE 2613, Emerging Components and Technologies for All-Optical Networks, (27 December 1995); https://doi.org/10.1117/12.228874

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