Paper
22 September 1995 Yield improvement by wafer edge engineering
Fred N. Hause, Daniel Kadoch, Dilip Wadhwani
Author Affiliations +
Abstract
Improvements in defect reduction of semiconductor processes and equipment have realized higher wafer sorts yield but have typically limited analysis and inspection of the edge of wafers by several millimeters. Sort yield on production wafers has been observed to be reduced by glass flaking and other undesired structures created on wafer edges which defect inspection typically excludes and process equipment overlooks their effect. We have taken a systematic approach to characterize integrated wafer edge processing such as size and tolerance of clamping during film deposition and plasma etching. Characterization of wafer edge processing is further refined through the use of process simulations. This modeling allows for predictive effects of changes in edge schemes as well as effects of gradual process equipment deviations such as varying clamp size during target lifetime in PVD equipment. By characterizing and modeling wafer edge processing we are able to circumvent defects that are generated by processing conditions unlike what is called for by design rules.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fred N. Hause, Daniel Kadoch, and Dilip Wadhwani "Yield improvement by wafer edge engineering", Proc. SPIE 2635, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis, (22 September 1995); https://doi.org/10.1117/12.221443
Lens.org Logo
CITATIONS
Cited by 1 patent.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Semiconducting wafers

Etching

Metals

Yield improvement

Data modeling

Glasses

Inspection equipment

RELATED CONTENT

Wafer-cleaning process after plasma metal etch
Proceedings of SPIE (July 07 1997)
Defect reduction strategy for plasma etch
Proceedings of SPIE (August 27 1999)
On-line process-model-based control of a plasma etcher
Proceedings of SPIE (January 01 1992)
Correction for etch proximity: new models and applications
Proceedings of SPIE (September 14 2001)
Charge-buildup damage to gate oxide
Proceedings of SPIE (February 15 1994)

Back to Top