Monte Carlo simulation of exciton states in spatially separated electron-hole system

En-Ge Wang

doi:10.1117/12.238970

1 May 1996 Monte Carlo simulation of exciton states in spatially separated electron-hole system

En-Ge Wang

Proceedings Volume 2693, Physics and Simulation of Optoelectronic Devices IV; (1996) https://doi.org/10.1117/12.238970
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

A variational and diffusion quantum Monte Carlo study of excitons in the In_1-xGa_xAs/GaSb_1-yAs_y quantum wells is reported. The variational Monte Carlo technique estimates the variational energy of an assumed trail wave function, and diffusion quantum Monte Carlo gives the exact ground state binding energy by simulating a branching random walk. As the unique band-edge relationship between the two host materials leads to a semiconductor-semi-metal transition with composition, we present the ground exciton state in two cases of (Delta) E greater than 0 and less than 0, where (Delta) E is the energy gap. The calculated binding energy (E_B) is shown as a function of well thickness (L). At L equals 30 angstrom, much larger than an earlier calculation (approximately 0.9 meV) given by a simple variational method, but are close to the experiments based on far-infrared magnetospectroscopy. Our calculations suggest that a novel semiconductor-excitonic insulator transition should be observable in the spatially separated electron-hole system.

Citation Download Citation

En-Ge Wang "Monte Carlo simulation of exciton states in spatially separated electron-hole system", Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); https://doi.org/10.1117/12.238970

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