Optical studies of epitaxial GaN-based materials

Jin-Joo Song; W. Shan; Theodore J. Schmidt; X. H. Yang; Arthur J. Fischer; S. J. Hwang; Bahman Taheri; Barbara L. Goldenberg; Robert D. Horning; Arnel A. Salvador; W. Kim; O. Aktas; Andrei Botchkarev; Hadis Morkoc

doi:10.1117/12.238943

1 May 1996 Optical studies of epitaxial GaN-based materials

Jin-Joo Song, W. Shan, Theodore J. Schmidt, X. H. Yang, Arthur J. Fischer, S. J. Hwang, Bahman Taheri, Barbara L. Goldenberg, Robert D. Horning, Arnel A. Salvador, W. Kim, O. Aktas, Andrei Botchkarev, Hadis Morkoc

Author Affiliations +

Proceedings Volume 2693, Physics and Simulation of Optoelectronic Devices IV; (1996) https://doi.org/10.1117/12.238943
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

A variety of spectroscopic techniques has been used to study the optical properties of epitaxial GaN based materials grown by metalorganic chemical vapor deposition and molecular beam epitaxy. The emphasis was on the issues vital to device applications such as stimulated emission and laser action, as well as carrier relaxation dynamics. Sharp exciton structures were observed by optical absorption measurements above 300 K, providing direct evidence of the formation of excitons in GaN at temperatures higher than room temperature. Using a picosecond streak camera, the time decay of free and bound exciton emissions was studied. By optical pumping, stimulated emission and lasing were investigated over a wide temperature range up to 420 K. In addition, the optical nonlinearity of GaN was studied using wave mixing techniques.

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Jin-Joo Song, W. Shan, Theodore J. Schmidt, X. H. Yang, Arthur J. Fischer, S. J. Hwang, Bahman Taheri, Barbara L. Goldenberg, Robert D. Horning, Arnel A. Salvador, W. Kim, O. Aktas, Andrei Botchkarev, and Hadis Morkoc "Optical studies of epitaxial GaN-based materials", Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); https://doi.org/10.1117/12.238943

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