Recent progress in AlGaN/GaN laser structures on 6H-SiC

Gary E. Bulman; John A. Edmond; Vladimir A. Dmitriev; Hua-Shuang Kong; Michelle T. Leonard; Kenneth G. Irvine; V. I. Nikolaev; A. S. Zubrilov; D. V. Tsvetkov

doi:10.1117/12.239007

1 May 1996 Recent progress in AlGaN/GaN laser structures on 6H-SiC

Gary E. Bulman, John A. Edmond, Vladimir A. Dmitriev, Hua-Shuang Kong, Michelle T. Leonard, Kenneth G. Irvine, V. I. Nikolaev, A. S. Zubrilov, D. V. Tsvetkov

Author Affiliations +

Proceedings Volume 2693, Physics and Simulation of Optoelectronic Devices IV; (1996) https://doi.org/10.1117/12.239007
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

Room temperature hole concentrations of 5 multiplied by 10¹⁷ cm^-3 and mobilities of 8.4 cm²/V-s have been measured on heavily Mg doped GaN layers grown on SiC. Specific contact resistivities of 0.046 (Omega) -cm² have been obtained from TLM measurements on ohmic contacts to these layers. Double heterostructures (DH) of GaN/Al_xGa_1-xN with x equals 0.1 have been grown on n-type 6H-SiC substrates. High quality facets have been fabricated by cleaving these DH structures. Photopumped stimulated emission has been observed in undoped structures at 372 nm at a threshold power density of 72 kW/cm². An optical gain of 1000 cm^-1 was measured in the same samples at 200 kW/cm².

Citation Download Citation

Gary E. Bulman, John A. Edmond, Vladimir A. Dmitriev, Hua-Shuang Kong, Michelle T. Leonard, Kenneth G. Irvine, V. I. Nikolaev, A. S. Zubrilov, and D. V. Tsvetkov "Recent progress in AlGaN/GaN laser structures on 6H-SiC", Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); https://doi.org/10.1117/12.239007

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