X-ray mask image-placement studies at the Microlithography Mask Development Center

Denise M. Puisto; Mark Lawliss; Thomas B. Faure; Janet M. Rocque; Kurt R. Kimmel; Douglas E. Benoit

doi:10.1117/12.240472

27 May 1996 X-ray mask image-placement studies at the Microlithography Mask Development Center

Denise M. Puisto, Mark Lawliss, Thomas B. Faure, Janet M. Rocque, Kurt R. Kimmel, Douglas E. Benoit

Proceedings Volume 2723, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI; (1996) https://doi.org/10.1117/12.240472
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

A continuing trend in X-ray lithography is the requirement for high accuracy masks. Image placement, or the ability to pattern images in the correct locations, is one of the most critical requirements. It is driven by a number of parameters, including the electron-beam lithography system and precision of the metrology system. Also, because the X-ray mask substrate consists of a thin membrane, it is very susceptible to the stresses of the resist film, absorber material, and plating base. An extensive analysis of the contributors to image placement was performed to determine the relative contribution of each. This analysis highlighted those contributors which caused the largest distortions and which, therefore, presented the most opportunities for improvement. Several changes were then implemented which resulted in a 50 percent overall improvement to placement of the X-ray mask images. The experimental design and detailed results are discussed.

Citation Download Citation

Denise M. Puisto, Mark Lawliss, Thomas B. Faure, Janet M. Rocque, Kurt R. Kimmel, and Douglas E. Benoit "X-ray mask image-placement studies at the Microlithography Mask Development Center", Proc. SPIE 2723, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI, (27 May 1996); https://doi.org/10.1117/12.240472

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