Factors affecting the dissolution rate of novolac resins II: developer composition effects

Clifford L. Henderson; Pavlos C. Tsiartas; Logan L. Simpson; Kelly D. Clayton; Sanju Pancholi; Adam R. Pawlowski; C. Grant Willson

doi:10.1117/12.241846

14 June 1996 Factors affecting the dissolution rate of novolac resins II: developer composition effects

Clifford L. Henderson, Pavlos C. Tsiartas, Logan L. Simpson, Kelly D. Clayton, Sanju Pancholi, Adam R. Pawlowski, C. Grant Willson

Author Affiliations +

Proceedings Volume 2724, Advances in Resist Technology and Processing XIII; (1996) https://doi.org/10.1117/12.241846
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

Resist function depends upon photoinduced changes in the dissolution rate of phenolic polymer films in aqueous base. The events that occur as the molecules in these films move from the glassy state into solution are not well understood. This paper presents an extensive study of the influence of developer composition and concentration on the dissolution rate of novolac films in aqueous base. The dissolution rate is shown to be a function of both the cation and anion composition and concentration in the developer at a constant pH. When salts are added to the base, the rate first increases, reaches a maximum, and then decreases with increasing salt concentration. In the concentration regime below the maximum, the rate increases linearly with cation concentration and is independent of anion composition. The dissolution of novolac is dependent on cation concentration and not ionic strength in this regime. In the concentration regime above the maximum, the composition of the anion has a marked influence on the rate.

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Clifford L. Henderson, Pavlos C. Tsiartas, Logan L. Simpson, Kelly D. Clayton, Sanju Pancholi, Adam R. Pawlowski, and C. Grant Willson "Factors affecting the dissolution rate of novolac resins II: developer composition effects", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); https://doi.org/10.1117/12.241846

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