Quarter- and subquarter-micron deep-UV lithography with chemically amplified positive resist

Yasunobu Onishi; Kazuo Sato; Kenzi Chiba; Masafumi Asano; Hirokazu Niki; Rumiko Horiguchi Hayase; Takao Hayashi

doi:10.1117/12.241861

14 June 1996 Quarter- and subquarter-micron deep-UV lithography with chemically amplified positive resist

Yasunobu Onishi, Kazuo Sato, Kenzi Chiba, Masafumi Asano, Hirokazu Niki, Rumiko Horiguchi Hayase, Takao Hayashi

Author Affiliations +

Proceedings Volume 2724, Advances in Resist Technology and Processing XIII; (1996) https://doi.org/10.1117/12.241861
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

The resist performance for quarter- and sub-quarter-micron domains using partially t- butoxycarbonylmethylated poly(4-vinylphenol) (BOCM-PVP) as a polymer dissolution inhibitor is reported. This resist contains some additives to improve resolution and process stability. This resist has high resolution, with linearity down to 0.225 micrometer L & S at 38 mJ/cm² on a KrF excimer laser stepper (NA equals 0.5, sigma equals 0.5) with a COG mask. Using a halftone phase shifting mask, 0.175 micrometer L & S patterns are resolved with a 1 micrometer depth of focus (DOF) on a KrF excimer stepper (NA equals 0.5, sigma equals 0.7, 1/2 annular illumination). The line width change vs. PEB temperature ((Delta) CD/(Delta) T) is 1.3 nm/degree. The line width shift over time between exposure and PEB is within plus or minus 0.01 micrometer even after 1 hr delay in a basic- contamination-free environment (NH₃ less than 1 ppb).

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Yasunobu Onishi, Kazuo Sato, Kenzi Chiba, Masafumi Asano, Hirokazu Niki, Rumiko Horiguchi Hayase, and Takao Hayashi "Quarter- and subquarter-micron deep-UV lithography with chemically amplified positive resist", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); https://doi.org/10.1117/12.241861

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