Subhalf-micron polysilicon gate control from 365- to 193-nm exposure

Brian Martin; Graham G. Arthur

doi:10.1117/12.240137

21 May 1996 Subhalf-micron polysilicon gate control from 365- to 193-nm exposure

Brian Martin, Graham G. Arthur

Proceedings Volume 2725, Metrology, Inspection, and Process Control for Microlithography X; (1996) https://doi.org/10.1117/12.240137
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

Calculations using lithography modeling programs are described to measure the variation in linewidth in polysilicon gates which pass over typical active area topography. All linewidths are calculated in the resist image, with and without top and bottom anti-reflective coatings, and range from 0.4 micrometer at 365 nm to 0.225 micrometer at 193 nm exposure.

Citation Download Citation

Brian Martin and Graham G. Arthur "Subhalf-micron polysilicon gate control from 365- to 193-nm exposure", Proc. SPIE 2725, Metrology, Inspection, and Process Control for Microlithography X, (21 May 1996); https://doi.org/10.1117/12.240137

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