Paper
7 June 1996 Patterning ULSI circuits
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Abstract
The traditional scaling of feature sized to ever smaller dimensions which has driven the semiconductor industry for 30 years is being challenged by physical and cost limits. As we approach the development of the 180-nm generation, we have a quite different technology scenario facing us than we have seen in the past. The approaches being contemplated can be summarized in order of utility as (1) extensions of existing patterning methods, (2) nonlithography patterning approaches, (3) extensions of the optical projection/reduction approach, (4) new beam techniques, and (5) probe techniques. I will review the challenges in each of these categories and indicate where serious development efforts are needed to sustain technology scaling into the ULSI generations.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John R. Carruthers "Patterning ULSI circuits", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); https://doi.org/10.1117/12.240903
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KEYWORDS
Photomasks

Optical lithography

Critical dimension metrology

Photoresist processing

Reflectivity

Excimer lasers

Image processing

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