Postexposure baking-temperature effect on resist profile with bottom antireflective coating

Chang-Ming Dai; Chin-Lung Lin; She-Chang Tai; James E. Lamb III; Masaru Iida

doi:10.1117/12.240985

7 June 1996 Postexposure baking-temperature effect on resist profile with bottom antireflective coating

Chang-Ming Dai, Chin-Lung Lin, She-Chang Tai, James E. Lamb III, Masaru Iida

Proceedings Volume 2726, Optical Microlithography IX; (1996) https://doi.org/10.1117/12.240985
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

Thin film interference effects in photoresist are the most serious issues for device production in sub-half micron patterning. These effects change the fraction of the energy available for photoresist absorption and subsequently cause serious line width fluctuation. One of the most realistic candidates from the point of view of the device mass production is the development of an organic bottom anti-reflective coating (ARC). Because organic ARC has high absorption characteristics of incident light, the standing wave in photoresist could be diminished. However, up to now, organic ARC still has some issues in resist profile (i.e. footing). Usually, the processes of organic ARC is optimized by tuning its thickness. Very little effort has been done on the optimization of post exposure bake. In this paper, the effects of post exposure bake temperature on resist profile and process windows, including energy latitude and focus latitude, of single line and dense line features will be discussed. The swing ratio is improved from 15.5 percent for the case without BARC to 1.2 percent for the case with ZHRi BARC of thickness 1010A (at top of reflectance curve). In term of PEB effect, PEB temperature of 90 degrees C is better than other conditions except it still has slight standing wave. With BARC, it can not only improve DOF process window from nothing to 0.8 micrometers of 0.35 micrometers dense and single line features but also reduce its proximity effect. Comparing the resist profile between BARC at top and bottom of reflective swing curve, the footing is much severe for the case of BARC with thickness at bottom of swing curve in HRi or XHRi material.

Citation Download Citation

Chang-Ming Dai, Chin-Lung Lin, She-Chang Tai, James E. Lamb III, and Masaru Iida "Postexposure baking-temperature effect on resist profile with bottom antireflective coating", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); https://doi.org/10.1117/12.240985

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KEYWORDS

Photoresist materials

Reflectivity

Lithography

Optical lithography

Photoresist processing

Semiconducting wafers

Bottom antireflective coatings

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