Paper
1 September 1996 Thick AlxGa1-xAs in GaAs/AlxGa1-xAs quantum wells: a leaky barrier
D. S. Kim
Author Affiliations +
Proceedings Volume 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology; 27789W (1996) https://doi.org/10.1117/12.2316045
Event: 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 1996, Taejon, Korea, Republic of
Abstract
The anomalously large Stokes and anti-Stokes real space charge transfer over thick barriers in GaAs/AlxGa1-xAs asymmetric double quantum wells (ADQW) in low temperature and low excitation limits has remained unsolved [1]. Here, we conclusively identify the inhomogeneity of the alloy barrier potential as the source of the Stokes transfer.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. S. Kim "Thick AlxGa1-xAs in GaAs/AlxGa1-xAs quantum wells: a leaky barrier", Proc. SPIE 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 27789W (1 September 1996); https://doi.org/10.1117/12.2316045
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Quantum wells

Physics

Gallium arsenide

Luminescence

Scattering

Solids

Back to Top