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1 September 1996 Thick AlxGa1-xAs in GaAs/AlxGa1-xAs quantum wells: a leaky barrier
D. S. Kim
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Proceedings Volume 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology; 27789W (1996) https://doi.org/10.1117/12.2316045
Event: 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 1996, Taejon, Korea, Republic of
Abstract
The anomalously large Stokes and anti-Stokes real space charge transfer over thick barriers in GaAs/AlxGa1-xAs asymmetric double quantum wells (ADQW) in low temperature and low excitation limits has remained unsolved [1]. Here, we conclusively identify the inhomogeneity of the alloy barrier potential as the source of the Stokes transfer.
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D. S. Kim "Thick AlxGa1-xAs in GaAs/AlxGa1-xAs quantum wells: a leaky barrier", Proc. SPIE 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 27789W (1 September 1996); https://doi.org/10.1117/12.2316045
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KEYWORDS
Quantum wells
Physics
Gallium arsenide
Luminescence
Scattering
Solids
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