Large Time-Delay-And-Integration (TDI) Arrays And Focal Plane Structures With Intrinsic Silicon Response

R. H. Dyck; H. Sadowski

doi:10.1117/12.931976

29 December 1981 Large Time-Delay-And-Integration (TDI) Arrays And Focal Plane Structures With Intrinsic Silicon Response

R. H. Dyck, H. Sadowski

Author Affiliations +

Proceedings Volume 0282, Technical Issues in Focal Plane Development; (1981) https://doi.org/10.1117/12.931976
Event: 1981 Technical Symposium East, 1981, Washington, D.C., United States

Abstract

This paper is primarily a review of two recent focal plane development projects. The first focal plane consists of six 1024x64 element TDI image sensor chips mounted on a prism beam-sharer. This focal plane is designed to give a video signal with high SNR over a wide dynamic range. The second focal plane consists of a single 1024x128 element TDI image sensor chip. It is designed to perform over a wide dynamic range extending down to starlight scene illumination levels. Both chip designs employ buried channel, silicon gate CCD technology. The silicon gate sensing area is designed for maximum broadband quantum efficiency over the range 500-900nm; an average quantum efficiency over that range of 50 percent has been achieved. The sensor element in both chip designs is a 20x20 micrometer square stage of a four-phase CCD register. This element design provides high MTF and a saturation charge level of approximately 1x106 electrons/pixel as is needed for achieving high SNR. On-chip preamplifiers are designed for specific requirements of the focal planes. The chip for the first focal plane utilizes a highly linear resettable floating gate amplifier; the linearity facilitates matching of imagery generated by neighboring chips. The chip for the second focal plane has two preamplifiers which may be read out in parallel; the first handles the full dynamic range of the CCD output and the second, because of higher gain, handles only the low end of the CCD output. The high gain amplifier has operated at 1MHz sample rate with a noise equivalent signal level of approximately 20 electrons/pixel RMS.

Citation Download Citation

R. H. Dyck and H. Sadowski "Large Time-Delay-And-Integration (TDI) Arrays And Focal Plane Structures With Intrinsic Silicon Response", Proc. SPIE 0282, Technical Issues in Focal Plane Development, (29 December 1981); https://doi.org/10.1117/12.931976

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
5 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Sensors

Image sensors

Charge-coupled devices

Cameras

Silicon

Signal to noise ratio

CCD image sensors

Show All Keywords

Keywords/Phrases

Search In:

Publication Years