Paper
30 September 1996 Development of self-alignment edge junction MIM matrix for LCD
Seng-dong Zhang, Guo-long Wang, Chuan-wen Zheng, Xiao-xian Cheng
Author Affiliations +
Proceedings Volume 2892, Display Devices and Systems; (1996) https://doi.org/10.1117/12.253344
Event: Photonics China '96, 1996, Beijing, China
Abstract
The research and fabrication of self-alignment edge junction MIM matrix (256 X 384) with Ta/TaMo double-layered bus line is described. The self-alignment edge junction MIM is realized by lift-off technology and exposed to light from the back side of the substrate. This novel technique and structure of MIM make it possible to obtain very small MIM junction in size (several micrometers 2 or smaller) without using strict fine pattern processing technology. The double- layered bus line technique not only decreases the resistivity of bus line (it is critical in the case of large area display), but also eliminate almost the possibility of the open line, one of the most major defects of MIM-LCD. At the same time, it makes the design of size and structure of MIM matrix flexible. The experimental results indicate that the current voltage characteristics of the edge junction MIM are similar considerably to the one of the planar junction. An experimental 256 X 384 pixels LCD actively addressed by MIM matrix is manufactured and a contrast of more than 26:1 is presented.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Seng-dong Zhang, Guo-long Wang, Chuan-wen Zheng, and Xiao-xian Cheng "Development of self-alignment edge junction MIM matrix for LCD", Proc. SPIE 2892, Display Devices and Systems, (30 September 1996); https://doi.org/10.1117/12.253344
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KEYWORDS
LCDs

Tantalum

Amorphous silicon

Chemical elements

Glasses

Oxidation

Photoresist materials

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