Paper
3 October 1996 Diode laser-pumped 1129-nm laser in Nd3+ doped Sr5(PO4)3F
Xin Xiong Zhang, W.-L. Zhou, Pin Hong, D. B. Darby, Dar-yuan Song, Bruce H. T. Chai
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Abstract
A low-threshold, efficient diode-pumped 1129 nm laser has been demonstrated for the first time using Nd3+ doped Sr5(PO4)3F. More than 50 mW of yellow laser output at 564.5 nm has been generated based on this laser transition.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xin Xiong Zhang, W.-L. Zhou, Pin Hong, D. B. Darby, Dar-yuan Song, and Bruce H. T. Chai "Diode laser-pumped 1129-nm laser in Nd3+ doped Sr5(PO4)3F", Proc. SPIE 2897, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications, (3 October 1996); https://doi.org/10.1117/12.252924
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KEYWORDS
Semiconductor lasers

Neodymium

Crystals

Diodes

Laser damage threshold

Laser crystals

Surface finishing

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