In this paper, we measure the size dependent optical scattering and electrical losses in etched-post and dielectrically apertured vertical-cavity lasers (VCLs). We show that reduced optical scattering losses are responsible for the dramatic improvement in device scaling seen with the use of the oxide-defined apertures. Furthermore, we experimentally show how to reduce this optical scattering loss through the use of thin apertures. We find that the electrical losses (due to current leakage around the active region and carrier diffusion in the active region) in the structures are minimized by reducing the doping near the active region, minimizing the current leakage. Finally, based on the experimental results, theoretical design curves for VCL scaling are calculated.
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