Novel approach for integration of an AlGaAs/GaAs heterojunction bipolar transistor with an InGaAs quantum well laser

Xiao-Ming Li; J. L. Jimenez; Michael J. Jurkovic; Wen I. Wang

doi:10.1117/12.264210

22 January 1997 Novel approach for integration of an AlGaAs/GaAs heterojunction bipolar transistor with an InGaAs quantum well laser

Xiao-Ming Li, J. L. Jimenez, Michael J. Jurkovic, Wen I. Wang

Author Affiliations +

Proceedings Volume 3006, Optoelectronic Integrated Circuits; (1997) https://doi.org/10.1117/12.264210
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

A novel approach for integration of an AlGaAs/GaAs double heterojunction bipolar transistor (D-HBT) with an InGaAs quantum well (QW) laser is demonstrated. The QW of the laser is incorporated within the lightly doped GaAs collector region of the HBT while the p⁺-base and n⁺- region of the collector are used compatibly as the electrodes of the laser diode, thus eliminating the need for an independent laser structure. Advantages of this approach include single-step molecular beam epitaxial (MBE) growth without the thermal cycling associated with sequential growth or selective regrowth techniques. In addition, elimination of wire interconnects and corresponding parasitics between the HBT collector and the laser diode enhance the performance of the HBT/laser diode circuit. HBTs with current gain as high as 60 and compatible InGaAs quantum well lasers with room temperature threshold current density as low as 500 A/cm² have been successfully fabricated. Results demonstrate that the structure has potential for application in optoelectronic integrated circuits (OEICs), fiber optic communications, and optical interconnects.

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Xiao-Ming Li, J. L. Jimenez, Michael J. Jurkovic, and Wen I. Wang "Novel approach for integration of an AlGaAs/GaAs heterojunction bipolar transistor with an InGaAs quantum well laser", Proc. SPIE 3006, Optoelectronic Integrated Circuits, (22 January 1997); https://doi.org/10.1117/12.264210

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KEYWORDS

Quantum wells

Semiconductor lasers

Gallium arsenide

Indium gallium arsenide

Laser damage threshold

Photonic integrated circuits

Electrons

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