Fabrication process of superconducting integrated circuits with submicron Nb/AlOx/Nb junctions using electron-beam direct writing technique

Masahiro Aoyagi; Hiroshi Nakagawa

doi:10.1117/12.275805

7 July 1997 Fabrication process of superconducting integrated circuits with submicron Nb/AlO_x/Nb junctions using electron-beam direct writing technique

Masahiro Aoyagi, Hiroshi Nakagawa

Author Affiliations +

Proceedings Volume 3048, Emerging Lithographic Technologies; (1997) https://doi.org/10.1117/12.275805
Event: Microlithography '97, 1997, Santa Clara, CA, United States

Abstract

For enhancing operating speed of a superconducting integrated circuit (IC), the device size must be reduced into the submicron level. For this purpose, we have introduced electron beam (EB) direct writing technique into the fabrication process of a Nb/AlO_x/Nb Josephson IC. A two-layer (PMMA/(alpha) M-CMS) resist method called the portable conformable mask (PCM) method was utilized for having a high aspect ratio. The electron cyclotron resonance (ECR) plasma etching technique was utilized. We have fabricated micron or submicron-size Nb/AlO_x/Nb Josephson junctions, where the size of the junction was varied from 2 micrometer to 0.5 micrometer at 0.1 micrometer intervals. These junctions were designed for evaluating the spread of the junction critical current. We achieved minimum-to-maximum I_c spread of plus or minus 13% for 0.81-micrometer-square (plus or minus 16% for 0.67-micrometer-square) 100 junctions spreading in 130- micrometer-square area. The size deviation of 0.05 micrometer was estimated from the spread values. We have successfully demonstrated a small-scale logic IC with 0.9-micrometer-square junctions having a 50 4JL OR-gate chain, where 4JL means four junctions logic family. The circuit was designed for measuring the gate delay. We obtained a preliminary result of the OR- gate logic delay, where the minimum delay was 8.6 ps/gate.

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Masahiro Aoyagi and Hiroshi Nakagawa "Fabrication process of superconducting integrated circuits with submicron Nb/AlO_x/Nb junctions using electron-beam direct writing technique", Proc. SPIE 3048, Emerging Lithographic Technologies, (7 July 1997); https://doi.org/10.1117/12.275805

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