DUV resist strategy for applications of next-generation devices

Yoshiaki Arai; Kazufumi Sato

doi:10.1117/12.275831

7 July 1997 DUV resist strategy for applications of next-generation devices

Yoshiaki Arai, Kazufumi Sato

Proceedings Volume 3049, Advances in Resist Technology and Processing XIV; (1997) https://doi.org/10.1117/12.275831
Event: Microlithography '97, 1997, Santa Clara, CA, United States

Abstract

Deep UV technology has improved significantly over the last few years, however the design requirements have also become more challenging. To achieve the design rules being considered at the leading edge of semiconductor manufacturing, we propose that different resist formulations be used for different layers.

Citation Download Citation

Yoshiaki Arai and Kazufumi Sato "DUV resist strategy for applications of next-generation devices", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); https://doi.org/10.1117/12.275831

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