Determination of the optical model of the MOS structure with spectroscopic ellipsometry

Andrzej Kudla; Danuta Brzezinska; Thomas Wagner; Zbigniew Sawicki

doi:10.1117/12.271833

1 April 1997 Determination of the optical model of the MOS structure with spectroscopic ellipsometry

Andrzej Kudla, Danuta Brzezinska, Thomas Wagner, Zbigniew Sawicki

Proceedings Volume 3094, Polarimetry and Ellipsometry; (1997) https://doi.org/10.1117/12.271833
Event: Polarimetry and Ellipsometry, 1996, Kazimierz Dolny, Poland

Abstract

The internal photo injection phenomena in a semitransparent gate metal-oxide-semiconductor (MOS) structure were described among others by the Przewlocki formula. This formula describes the dependence between external voltage applied to the gate to get zero photoelectric current and the light absorption in both electrodes. To study optical properties of the MOS structure, ellipsometric measurements and calculations for the Al-SiO₂-Si system were done using J.A. Woolam spectroscopic ellipsometer VASE. The optical model of this structure was determined and used to calculate the dependence of the voltage on the light wavelength (lambda) in Przewlocki's formula.

Citation Download Citation

Andrzej Kudla, Danuta Brzezinska, Thomas Wagner, and Zbigniew Sawicki "Determination of the optical model of the MOS structure with spectroscopic ellipsometry", Proc. SPIE 3094, Polarimetry and Ellipsometry, (1 April 1997); https://doi.org/10.1117/12.271833

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