Mask bias effects in e-beam cell projection lithography

Takahiro Ema; Hiroshi Yamashita; Ken Nakajima; Hiroshi Nozue

doi:10.1117/12.277276

28 July 1997 Mask bias effects in e-beam cell projection lithography

Takahiro Ema, Hiroshi Yamashita, Ken Nakajima, Hiroshi Nozue

Proceedings Volume 3096, Photomask and X-Ray Mask Technology IV; (1997) https://doi.org/10.1117/12.277276
Event: Photomask Japan '97, 1997, Kawasaki City, Japan

Abstract

We newly developed the mask bias method in electron beam (EB) cell projection lithography to improve the resolution and to increase the throughput. In this method, the open slits of EB mask are shrunk to reduce the ratio of open area in EB mask. This shrinkage decreases the Coulomb interaction effect and the proximity effect. This results that 0.14 micrometer L/S pattern can be resolved even at the maximum shot size (25 micrometer²) and so the writing time of 0.14 micrometer L/S pattern can be reduced by half.

Citation Download Citation

Takahiro Ema, Hiroshi Yamashita, Ken Nakajima, and Hiroshi Nozue "Mask bias effects in e-beam cell projection lithography", Proc. SPIE 3096, Photomask and X-Ray Mask Technology IV, (28 July 1997); https://doi.org/10.1117/12.277276

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available