Paper
20 February 1998 Photoreflectance spectroscopy of Si surface delta doping on GaAs (001)
Mingfang Wan, Xingquan Liu, Xiaoshuang Chen, Wei Lu, Shuechu Shen
Author Affiliations +
Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300663
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China
Abstract
Photoreflectance (PR) spectroscopy system is combined with molecular beam epitaxy (MBE) to accomplish in-situ PR measuring of the Si surface (delta) doping on GaAs (001) with different concentrations at different temperatures. The features observed on the high-energy side of the fundamental gap are attributed to transitions involving electronic subbands in the half V-shaped potential well. We find that the Si (delta) -doping-related spectral structure first shifts to high energy side with the doping concentration increasing, then almost stop shifting with the doping concentration higher than 2.4 X 1014 cm-2 when temperature increases, at certain doping concentration the Si (delta) - doping-related transition shifts toward low energy side. The dependence of the transition on doping concentration is well explained by using a simple theoretical model.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mingfang Wan, Xingquan Liu, Xiaoshuang Chen, Wei Lu, and Shuechu Shen "Photoreflectance spectroscopy of Si surface delta doping on GaAs (001)", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); https://doi.org/10.1117/12.300663
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KEYWORDS
Doping

Silicon

Gallium arsenide

Spectroscopy

Molecular beam epitaxy

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