Paper
2 September 1997 Rapid in-fab monitoring of ion implant doses using total x-ray fluorescence
Cornelia A. Weiss, Tim Z. Hossain, Ehrenfried Zschech, Brian J. MacDonald
Author Affiliations +
Abstract
Total reflection X-ray fluorescence (TXRF) is a useful tool for rapid, nondestructive monitoring of implant doses in semiconductor manufacturing. For As-doped (10 keV and 80 keV) Si wafers with an implant dose of 3 X 1015 at/cm2, As fluorescence yield and accumulated As+ dose measured by Secondary Ion Mass Spectroscopy (SIMS) have been compared. This comparison between TXRF and SIMS demonstrates the power of TXRF as a new nondestructive technique for in-line shallow implant dose and profile monitoring.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Cornelia A. Weiss, Tim Z. Hossain, Ehrenfried Zschech, and Brian J. MacDonald "Rapid in-fab monitoring of ion implant doses using total x-ray fluorescence", Proc. SPIE 3215, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing, (2 September 1997); https://doi.org/10.1117/12.284675
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Cited by 1 scholarly publication.
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KEYWORDS
X-rays

X-ray fluorescence spectroscopy

Reflectivity

Silicon

Ions

Nondestructive evaluation

Semiconducting wafers

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