STADIUM SOI reliability simulator for the analysis of hot-electron and ESD-induced degradation in nonisothermal devices

David Lee; Thomas J. Sanders

doi:10.1117/12.284692

11 September 1997 STADIUM SOI reliability simulator for the analysis of hot-electron and ESD-induced degradation in nonisothermal devices

David Lee, Thomas J. Sanders

Author Affiliations +

Proceedings Volume 3216, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis III; (1997) https://doi.org/10.1117/12.284692
Event: Microelectronic Manufacturing, 1997, Austin, TX, United States

Abstract

This paper addresses the integrated circuit industry needs for non-isothermal simulation in device reliability analysis, initial input factor sensitivity analysis and their software implementation. The key reliability issues are the hot-electron induced oxide damages and electro-static discharge (ESD) damages. The main purpose of this work is to provide a design aid tool to improve device reliability and performance. The reliability simulator developed in this work not only predicts designed device reliability, but also provides some information about the effect of manufacturing variations on reliability. This is accomplished by combining the statistical methodology with existing technology computer aided design (TCAD) tools. The design of experiment (DoE) technique can be successfully employed to analyze the effect of manufacturing variations on the SOT device reliability. As an example, the reliability analysis and the statistical analysis have performed on SOT MOS devices (partially depleted and fully depleted SOT) and submicron bulk-Si MOSFET's to verify the applied modeling method.

Citation Download Citation

David Lee and Thomas J. Sanders "STADIUM SOI reliability simulator for the analysis of hot-electron and ESD-induced degradation in nonisothermal devices", Proc. SPIE 3216, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis III, (11 September 1997); https://doi.org/10.1117/12.284692

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