Paper
23 July 1982 Neutron Damage Effects In Laser Diodes
C. E. Barnes
Author Affiliations +
Proceedings Volume 0328, Laser and Laser Systems Reliability; (1982) https://doi.org/10.1117/12.933890
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States
Abstract
The effects of neutron irradiation on a variety of semiconductor laser diodes have been studied as a function of temperature between 200K and 320K. Total light output was measured as a function of current from well below threshold to the maximum operating point. The results show that the radiation sensitivity of all the laser types examined is less at lower temperatures. As long as the operating current is well above threshold following irradiation, the light output is relatively insensitive to neutron irradiation. In one of the laser types, neutron-enhanced operational degradation was also observed. Because of the complex structure of these laser diodes, it is difficult to associate particular device parameters with the degree of neutron sensitivity. However, in general the responses of the lasers to irradiation are similar. From the applied point of view, the results indicate that laser diodes with maximum operating currents well above their threshold currents are appropriate for radiation environment applications.*
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. E. Barnes "Neutron Damage Effects In Laser Diodes", Proc. SPIE 0328, Laser and Laser Systems Reliability, (23 July 1982); https://doi.org/10.1117/12.933890
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Cited by 7 scholarly publications.
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KEYWORDS
Semiconductor lasers

Pulsed laser operation

Laser damage threshold

Gallium arsenide

Continuous wave operation

Heterojunctions

Diodes

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