Performance analysis of fully depleted optical thyristors using the finite difference method

Jeong-Ho Lee; Young-Wan Choi

doi:10.1117/12.316741

7 July 1998 Performance analysis of fully depleted optical thyristors using the finite difference method

Jeong-Ho Lee, Young-Wan Choi

Proceedings Volume 3283, Physics and Simulation of Optoelectronic Devices VI; (1998) https://doi.org/10.1117/12.316741
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

The reverse full-depletion voltages (V_RD's) of PnpN depleted optical thyristors (DOTs) are obtained as a function of semiconductor parameters by using the finite difference method. For the full-depletion, the DOT requires a reverse bias, which determine the clock voltage level. The required magnitude of clock pulse should be as low as possible for the fast operation and the integration with electronics. In this study, we define the condition for the full-depletion and calculate V_RD's varying semiconductor parameters, such as layer thickness and doping concentration. As a result, V_RD is found to be very sensitive to the device parameters. As the worst case, V_RD is changed by 34% for 10% variation of the low doped center layer thickness.

Citation Download Citation

Jeong-Ho Lee and Young-Wan Choi "Performance analysis of fully depleted optical thyristors using the finite difference method", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); https://doi.org/10.1117/12.316741

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