Quantum-dot active regions for extended-wavelength-range GaAs-based light-emitting devices

Diana L. Huffaker; Jeremy D. Schaub; Hongyu Deng; Dennis G. Deppe

doi:10.1117/12.316678

7 July 1998 Quantum-dot active regions for extended-wavelength-range GaAs-based light-emitting devices

Diana L. Huffaker, Jeremy D. Schaub, Hongyu Deng, Dennis G. Deppe

Proceedings Volume 3283, Physics and Simulation of Optoelectronic Devices VI; (1998) https://doi.org/10.1117/12.316678
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

This paper describes crystal growth techniques for achieving good electroluminescence efficiency and narrow linewidth from a GaAs-based light emitting device emitting at 1.3 micrometers . The long wavelength emission is achieved using a quantum dot active region grown by sub-monolayer In, Ga and As. Low threshold lasing at a shorter wavelength of 1.15 micrometers is achieved in a GaAs-based oxide-confined vertical- cavity laser using alternating single monolayer growth of InAs/GaAs QDs.

Citation Download Citation

Diana L. Huffaker, Jeremy D. Schaub, Hongyu Deng, and Dennis G. Deppe "Quantum-dot active regions for extended-wavelength-range GaAs-based light-emitting devices", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); https://doi.org/10.1117/12.316678

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