Beam quality in multiwatt semiconductor amplifiers

David J. Bossert; Gregory C. Dente; Michael L. Tilton

doi:10.1117/12.304432

7 April 1998 Beam quality in multiwatt semiconductor amplifiers

David J. Bossert, Gregory C. Dente, Michael L. Tilton

Proceedings Volume 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II; (1998) https://doi.org/10.1117/12.304432
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

Filamentation currently limits the amount of diffraction- limited power that can be obtained from broad-area semiconductor amplifiers. This paper examines the filamentation tendencies of a wide input-aperture tapered amplifier. Experimental measurements of filament gain under varying duty-cycle are offered and compared to theory. A numerical simulation of the device operation, which addresses non-uniform current injection, is also presented.

Citation Download Citation

David J. Bossert, Gregory C. Dente, and Michael L. Tilton "Beam quality in multiwatt semiconductor amplifiers", Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); https://doi.org/10.1117/12.304432

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