Novel antireflective structure for metal layer patterning

Sang-Soo Choi; Han Sun Cha; Jong-Soo Kim; Jong Mun Park; Dohoon Kim; Kag Hyeon Lee; Jin-Ho Ahn; Hai Bin Chung; Bo Woo Kim

doi:10.1117/12.312423

29 June 1998 Novel antireflective structure for metal layer patterning

Sang-Soo Choi, Han Sun Cha, Jong-Soo Kim, Jong Mun Park, Dohoon Kim, Kag Hyeon Lee, Jin-Ho Ahn, Hai Bin Chung, Bo Woo Kim

Author Affiliations +

Proceedings Volume 3333, Advances in Resist Technology and Processing XV; (1998) https://doi.org/10.1117/12.312423
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

IN lithographic processing to define patterns on the high reflective substrate, ARLs (anti-reflective layers) not only enable better line width control but also realize designs that were previously impossible to print. So far, several anti-reflective films like TiN, SiOxNy:H, and organic films for the high reflective substrate have been studied. In this paper, we suggest the novel anti-reflective structure for metal layer patterning, which is Al(aluminum)/SiO₂ stack structure. the reflectivity and the resist absorption rate are simulated for the I-line, and ArF lithography. The simulated thickness of ARL(Al) and ARL(SiO₂) for zero reflectivity on the wavelength of 365 nm was 12.6 nm and 95.2 nm respectively, and on the 193 nm was 20.4 nm and 98.8 nm. The process latitude according to the thickness variation of the deposited ARL(Al) and ARL(SiO₂) films, and the results of the lithography experiment were discussed.

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Sang-Soo Choi, Han Sun Cha, Jong-Soo Kim, Jong Mun Park, Dohoon Kim, Kag Hyeon Lee, Jin-Ho Ahn, Hai Bin Chung, and Bo Woo Kim "Novel antireflective structure for metal layer patterning", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312423

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