Paper
20 April 1998 Characterization of layered structures by photoacoustic piezoelectric technique
Author Affiliations +
Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306266
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine
Abstract
A thermoelastic response that arises in a two-layered wafer under its heating by periodically modulated light beam has been studied theoretically. For the case of piezoelectric detection of the signal an analytical expression for the output voltage of the transducer has been obtained which allows to calculate the amplitude and phase characteristics versus modulation frequency. It is shown that these characteristics vary strongly depending on thermal and elastic properties of both layers.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Margarita L. Shendeleva "Characterization of layered structures by photoacoustic piezoelectric technique", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); https://doi.org/10.1117/12.306266
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CITATIONS
Cited by 5 scholarly publications.
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KEYWORDS
Semiconducting wafers

Modulation

Transducers

Photoacoustic spectroscopy

Silicon

Phase shift keying

Signal detection

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