Optical and photoelectrical studies of strain fields in semiconductor crystals

Boris K. Serdega; V. G. Zykov; Galina N. Semenova; L. V. Shekhovtsov

doi:10.1117/12.306198

20 April 1998 Optical and photoelectrical studies of strain fields in semiconductor crystals

Boris K. Serdega, V. G. Zykov, Galina N. Semenova, L. V. Shekhovtsov

Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306198
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine

Abstract

For some semiconductor crystals and structures the intrinsic mechanical stresses due to the nonuniform dopant distribution were investigated. p-Ge crystals with layered nonuniformities, Si wafers and Ge - GaAs heterostructures served as model samples. Using the birefringence signal measurements, a correlation was found between the dopant distribution and the intrinsic deformations stemming from them. The spectral characteristics of the Ge - GaAs heterostructures indicate at the presence of (oppositely oriented) dopant concentration gradients along the interface in Ge film and GaAs substrate. Using a combination of the optical and photoelectrical measurements enhances the possibilities for the interpretation of the experimental results and also provides a basis for developing nondestructive control methods.

Citation Download Citation

Boris K. Serdega, V. G. Zykov, Galina N. Semenova, and L. V. Shekhovtsov "Optical and photoelectrical studies of strain fields in semiconductor crystals", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); https://doi.org/10.1117/12.306198

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