Optical characterization of As40S40Se20 inorganic resist

Alexander V. Stronski; Miroslav Vlcek; Peter E. Shepeljavi; Apollinary I. Stetsun

doi:10.1117/12.306248

20 April 1998 Optical characterization of As₄₀S₄₀Se₂₀ inorganic resist

Alexander V. Stronski, Miroslav Vlcek, Peter E. Shepeljavi, Apollinary I. Stetsun

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Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306248
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine

Abstract

The results of investigations of photostimulated phenomena in As₄₀S₄₀Se₂₀ thin films with the help of optical methods are presented in this paper. Raman spectra, optical constants in the transparency region of as- evaporated, exposed and annealed films were obtained. The As₄₀S₄₀Se₂₀ thin films have shown good etching selectivity in amine based (in particular, nonaqueous solutions based on triethylamine) etching solutions.

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Alexander V. Stronski, Miroslav Vlcek, Peter E. Shepeljavi, and Apollinary I. Stetsun "Optical characterization of As₄₀S₄₀Se₂₀ inorganic resist", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); https://doi.org/10.1117/12.306248

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