Paper
26 October 1998 Characterization of deep levels in a mesa-type HgCdTe IR detector
Junya Yoshino, Jun Morimoto, Hideo Wada, Akira Ajisawa, Masaya Kawano, Naoki Oda
Author Affiliations +
Abstract
The relationships between the figure of merit R0A representing the junction property and deep levels representing electric properties of semiconductors have been investigated. R0A can be estimated by current-voltage (I- V) measurements. Deep levels can be estimated using spectral analysis of deep level transient spectroscopy (SADLTS). It has been confirmed that values of activation energies concentrate around 30 meV with the increase of R0A. This suggests that the influence from the inherent deep levels in the HgCdTe device becomes strong due to the increase of R0A, resulting in the improvement of the diode characteristics.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Junya Yoshino, Jun Morimoto, Hideo Wada, Akira Ajisawa, Masaya Kawano, and Naoki Oda "Characterization of deep levels in a mesa-type HgCdTe IR detector", Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998); https://doi.org/10.1117/12.328007
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Cited by 3 scholarly publications.
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KEYWORDS
Mercury cadmium telluride

Diodes

Silicon

Capacitance

Temperature metrology

Infrared detectors

Ions

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