Paper
1 July 1998 Physical properties and evaluation of spectrometer-grade CdSe single crystals
Henry Chen, M. Hayes, X. Ma, Ying-Fang Chen, Stephen U. Egarievwe, Jean-Olivier Ndap, Kaushik Chattopadhyay, Arnold Burger, Jon R. Leist
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Abstract
Undoped CdSe single crystals were investigated by current- voltage measurement and low temperature photoluminescence. Crystal quality and surface morphology were also studied by optical microscopy and scanning electron microscopy. Together with gamma spectroscopy, the results show that the CdSe crystals have high resistivities in the 1010 (Omega) (DOT)cm range. This indicates their usefulness for room temperature nuclear radiation detection. Small active volume CdSe detector were fabricated and their performance is presented. A comparison of fundamental material properties between CdSe and CdZnTe detectors is also given.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Henry Chen, M. Hayes, X. Ma, Ying-Fang Chen, Stephen U. Egarievwe, Jean-Olivier Ndap, Kaushik Chattopadhyay, Arnold Burger, and Jon R. Leist "Physical properties and evaluation of spectrometer-grade CdSe single crystals", Proc. SPIE 3446, Hard X-Ray and Gamma-Ray Detector Physics and Applications, (1 July 1998); https://doi.org/10.1117/12.312895
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Cited by 5 scholarly publications.
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KEYWORDS
Crystals

Sensors

Spectroscopy

Etching

Scanning electron microscopy

Surface finishing

Wet etching

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