High Density Schottky Barrier Infrared Charge-Coupled Device (IRCCD) Sensors For Short Wavelength Infrared (SWIR) Applications At Intermediate Temperature

H. Elabd; T. S. Villani; J. R. Tower

doi:10.1117/12.933781

23 November 1982 High Density Schottky Barrier Infrared Charge-Coupled Device (IRCCD) Sensors For Short Wavelength Infrared (SWIR) Applications At Intermediate Temperature

H. Elabd, T. S. Villani, J. R. Tower

Author Affiliations +

Proceedings Volume 0345, Advanced Multispectral Remote Sensing Technology and Applications; (1982) https://doi.org/10.1117/12.933781
Event: 1982 Technical Symposium East, 1982, Arlington, United States

Abstract

Monolithic 32 x 64 and 64 x 128 palladium silicide (Pd2Si) interline transfer IRCCDs sensitive in the 1-3.5 pm spectral band have been developed. This silicon imager exhibits a low response nonuniformity of typically 0.2-1.6% rms, and has been operated in the temperature range between 40-140K. Spectral response measurements of test Pd₂Si p-type Si devices yield quantum efficiencies of 7.9% at 1.25 μm, 5.6% at 1.65 μm and 2.2% at 2.22 μm. Improvement in quantum efficiency is expected by optimizing the different structural parameters of the Pd₂Si detectors. The spectral response of the Pd₂Si detectors fit a modified Fowler emission model. The measured photo-electric barrier height for the Pd₂Si detector is ≈0.34 eV and the measured quantum efficiency coefficient, C₁, is 19%/eV. The dark current level of Pd₂Si Schottky barrier focal plane arrays (FPAs) is sufficiently low to enable operation at intermediate tem-peratures at TV frame rates. Typical dark current level measured at 120K on the FPA is 2 nA/cm². The Pd₂Si Schottky barrier imaging technology has been developed for satellite sensing of earth resources. The operating temperature of the Pd2Si FPA is compatible with passive cooler performance. In addition, high density Pd2Si Schottky barrier FPAs are manufactured with high yield and therefore represent an economical approach to short wavelength IR imaging. A Pd₂Si Schottky barrier image sensor for push-broom multispectral imaging in the 1.25, 1.65, and 2.22 μm bands is being studied. The sensor will have two line arrays (dual band capability) of 512 detectors each, with 30 μm center-to-center detector spacing. The device will be suitable for chip-to-chip abutment, thus providing the capability to produce large, multiple chip focal planes with contiguous, in-line sensors.

Citation Download Citation

H. Elabd, T. S. Villani, and J. R. Tower "High Density Schottky Barrier Infrared Charge-Coupled Device (IRCCD) Sensors For Short Wavelength Infrared (SWIR) Applications At Intermediate Temperature", Proc. SPIE 0345, Advanced Multispectral Remote Sensing Technology and Applications, (23 November 1982); https://doi.org/10.1117/12.933781

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