Optical and structural characterization of nc-Si/a-SiO2 superlattices

G. Grom; Leonid Tsybeskov; Karl D. Hirschman; Philippe M. Fauchet; Mario Zacharias; Thomas N. Blanton; John P. McCaffrey; Jean-Marc Baribeau; G. I. Sproule; H. J. Labbe; David J. Lockwood

doi:10.1117/12.328605

4 December 1998 Optical and structural characterization of nc-Si/a-SiO₂ superlattices

G. Grom, Leonid Tsybeskov, Karl D. Hirschman, Philippe M. Fauchet, Mario Zacharias, Thomas N. Blanton, John P. McCaffrey, Jean-Marc Baribeau, G. I. Sproule, H. J. Labbe, David J. Lockwood

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Proceedings Volume 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications; (1998) https://doi.org/10.1117/12.328605
Event: 1998 International Conference on Applications of Photonic Technology, 1998, Ottawa, Canada

Abstract

Nanocrystalline (nc)-Si/amorphous (a)-SiO₂ superlattices (SLs) have been studied by transmission electron microscopy, Auger elemental microanalysis (AEM), Raman spectroscopy and optical reflection spectroscopy. Recrystallized Si/SiO₂ SL is extremely stable under high temperature annealing (up to 1100 degree(s)C) and aggressive wet thermal oxidation: AEM and Raman spectroscopy of folded acoustic phonons show no changes in periodicity in the growth direction and the abruptness of the nc-Si/a-SiO₂ interfaces. Furthermore, Raman spectroscopy in the optical phonon range indicates that the annealing decreases the defect density in the Si nanocrystals, possibly due to Si-Si bond rearrangement accompanied by surface reconstruction and surface defect passivation by oxygen.

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G. Grom, Leonid Tsybeskov, Karl D. Hirschman, Philippe M. Fauchet, Mario Zacharias, Thomas N. Blanton, John P. McCaffrey, Jean-Marc Baribeau, G. I. Sproule, H. J. Labbe, and David J. Lockwood "Optical and structural characterization of nc-Si/a-SiO₂ superlattices", Proc. SPIE 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications, (4 December 1998); https://doi.org/10.1117/12.328605

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KEYWORDS

Silicon

Stereolithography

Raman spectroscopy

Oxidation

Amorphous silicon

Crystals

Annealing

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