Photo-degradation in II-VI heterostructures using n-i-n photoconductors

Alexander N. Cartwright; Sundari Nagarathnam; E. H. Lee; H. Luo

doi:10.1117/12.328679

4 December 1998 Study of photodegradation in II-VI heterostructures using n-i-n photoconductors

Alexander N. Cartwright, Sundari Nagarathnam, E. H. Lee, H. Luo

Proceedings Volume 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications; (1998) https://doi.org/10.1117/12.328679
Event: 1998 International Conference on Applications of Photonic Technology, 1998, Ottawa, Canada

Abstract

In this work, photo-degradation in ZnSe/Zn_0.67Cd_0.33Se multiple quantum well (MQW) structures was studied using photoluminescence of undoped structures and photocurrent of n-i-n photoconductors. The photoluminescence measurements were performed with respect to sample temperature, pump power and pump wavelength. The dependence of the measured photo-degradation from optical pumping on each of these parameters was quantified. To further understand this problem, n-i-n photoconductors were fabricated from these materials. Using these photoconductors, the formation of non-radiative recombination sites was monitored using standard photocurrent experiments. Moreover, the photocurrent generated was investigated as a function of applied voltage and excitation wavelength. The magnitude of the photocurrent decayed in a similar fashion to the photoluminescence measurements. Furthermore, n-i-n photoconductors fabricated from bulk material, as opposed to MQW structures, showed no evidence of photo-degradation. This implies that the photo- degradation is due to the interaction of the two constituent material systems.

Citation Download Citation

Alexander N. Cartwright, Sundari Nagarathnam, E. H. Lee, and H. Luo "Study of photodegradation in II-VI heterostructures using n-i-n photoconductors", Proc. SPIE 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications, (4 December 1998); https://doi.org/10.1117/12.328679

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