High-speed monitoring and control of CVD metal-organic precursors using FT-IR spectroscopy

David F. Marran; Chad M. Nelson; Louis J. Guido; Brendan Gaffey

doi:10.1117/12.337468

22 January 1999 High-speed monitoring and control of CVD metal-organic precursors using FT-IR spectroscopy

David F. Marran, Chad M. Nelson, Louis J. Guido, Brendan Gaffey

Proceedings Volume 3535, Advanced Sensors and Monitors for Process Industries and the Environment; (1999) https://doi.org/10.1117/12.337468
Event: Photonics East (ISAM, VVDC, IEMB), 1998, Boston, MA, United States

Abstract

MOCVD has emerged as an important technique for the manufacturing of advanced semiconducting and optoelectronic thin film materials with multilayered and graded compositional profiles. The commercialization of these materials will be limited without real-time monitoring and closed loop control of the growth chemistry. This limitation has the potential to be eliminated using a novel FT-IR with a novel micro-multipass gas cell. The cell, based on proprietary aberration corrected mirrors, is characterized by a 1-meter optical pathlength, a 2.5 cm base path, a d an internal volume of 2.8 cm³. The cell is designed to operate in cross-flow such that the gas in the cell is representative of the sample stream with < 0.5 second time delay following a step change in concentration. Preliminary measurements for trimethylgallium, trimethylindium, and bis(cyclopentadienyl)magnesium indicate detection limits of 1.3 Pa, 1.6 Pa, and 0.1 Pa, respectively, using the low volume cell and a one second scan time.

Citation Download Citation

David F. Marran, Chad M. Nelson, Louis J. Guido, and Brendan Gaffey "High-speed monitoring and control of CVD metal-organic precursors using FT-IR spectroscopy", Proc. SPIE 3535, Advanced Sensors and Monitors for Process Industries and the Environment, (22 January 1999); https://doi.org/10.1117/12.337468

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