GaInSbAs/AlInSbAs vertical-cavity surface-emitting laser (VCSEL) for operation at 1.5 um

Maria Linnik; Aristos Christou

doi:10.1117/12.356934

6 August 1999 GaInSbAs/AlInSbAs vertical-cavity surface-emitting laser (VCSEL) for operation at 1.5 μm

Maria Linnik, Aristos Christou

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Proceedings Volume 3625, Physics and Simulation of Optoelectronic Devices VII; (1999) https://doi.org/10.1117/12.356934
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

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Maria Linnik and Aristos Christou "GaInSbAs/AlInSbAs vertical-cavity surface-emitting laser (VCSEL) for operation at 1.5 μm", Proc. SPIE 3625, Physics and Simulation of Optoelectronic Devices VII, (6 August 1999); https://doi.org/10.1117/12.356934

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