Paper
12 April 1999 Thin-film EL phosphor development
Wusheng Tong
Author Affiliations +
Proceedings Volume 3636, Flat Panel Display Technology and Display Metrology; (1999) https://doi.org/10.1117/12.344658
Event: Electronic Imaging '99, 1999, San Jose, CA, United States
Abstract
Recent developments in improving the performance of SrS based blue thin film EL phosphors are reported. A model approach to optimizing EL material is presented, which considers activator incorporation, charge compensation, defect reduction and energy transfer processes. We demonstrate how the flexibility and accuracy of physical vapor deposition and modern characterization techniques, used in a systematic and cost effective research methodology, can improve the understanding of these issues and be used to develop more efficient thin film EL phosphors. For example, the growth of specialized materials system coupled with PL and PLE, EPR measurements were successfully used to understand the defect structure due to the valence mismatch from the doping of 3+ Ce onto the 2+ Sr site. Successful incorporation of 1+ Ag into SeS:Ce was shown not only to improve both the blue chromaticity from x equals 0.31, y equals 0.52, to x equals 0.26, y equals 0.46, and the EL brightness, but also to eliminate the thermal quenching of the emission intensity. QDLTS was used to identify the trap states and density to help the development of a low temperature annealing process for SeS:Cu. A reduction in the thermal quenching behavior due to codoping was also observed in this material.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wusheng Tong "Thin-film EL phosphor development", Proc. SPIE 3636, Flat Panel Display Technology and Display Metrology, (12 April 1999); https://doi.org/10.1117/12.344658
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Cited by 2 scholarly publications.
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KEYWORDS
Electroluminescence

Strontium

Thin films

Copper

Sulfur

Annealing

Ions

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