Influence of semiconductor surface condition on electrical and photoelectric properties of Al-Zn3P2 contacts

Nella Mirowska; Miroslaw Adamczyk

doi:10.1117/12.344726

8 April 1999 Influence of semiconductor surface condition on electrical and photoelectric properties of Al-Zn₃P₂ contacts

Nella Mirowska, Miroslaw Adamczyk

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Proceedings Volume 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (1999) https://doi.org/10.1117/12.344726
Event: International Conference on Solid State Crystals '98, 1998, Zakopane, Poland

Abstract

Zinc phosphide Zn₃P₂ has been intensively investigated as one of the most promising materials for applications in low-cost solar energy converters and broad- range photodetectors. The Schottky barriers formed by Al on Zn₃P₂ p-type crystals have been studied. Substantial differences were observed depending on whether the semiconductor surface was chemically etched, mechanically polished or/and heat treated at 523 K. Measurements of current-voltage characteristics and photovoltaic spectrum of Al-Zn₃P₂ contacts at room temperature have been used for determination of some electrical parameters of junctions as well as optical transitions and hole concentration in the semiconductor. The value of barrier height, (Phi) _B, changed from 0.76 to 0.78 eV, the junction depth--from about 3 to 79 micrometers , and the contact resistance--from 5.9 X 10³ to 858 X 10³ (Omega) . The hole concentration of examined polycrystalline samples was equal to 2 X 10¹³ divided by 5 X 10¹⁵ cm. The condition of semiconductor surface seems to have an essential influence on obtained electrical parameters of Al-Zn₃P₂ junctions and their spectral characteristics. To understand the problems connected with metal-Zn₃P₂ interface layer formation, the free enthalpy, (Delta) G_R, was calculated. The analysis of the results, obtained especially for the Mg and Al, have indicated that Al is also a good candidate for formation of rectifying contacts to Zn₃P₂.

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Nella Mirowska and Miroslaw Adamczyk "Influence of semiconductor surface condition on electrical and photoelectric properties of Al-Zn₃P₂ contacts", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); https://doi.org/10.1117/12.344726

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KEYWORDS

Aluminum

Photovoltaics

Semiconductors

Diodes

Annealing

Metals

Solar energy

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